JANTXV2N6300
vs
2N6300
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SILICON TRANSISTOR CORP
NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
COLLECTOR
Collector Current-Max (IC)
8 A
8 A
Collector-Emitter Voltage-Max
60 V
60 V
Configuration
DARLINGTON
DARLINGTON
DC Current Gain-Min (hFE)
750
750
JEDEC-95 Code
TO-213
TO-66
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
200 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
75 W
75 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
4 MHz
4 MHz
Base Number Matches
9
24
Collector-Base Capacitance-Max
200 pF
VCEsat-Max
2 V
Compare JANTXV2N6300 with alternatives