JANTXV2N6212
vs
BUX66B
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
VPT COMPONENTS
INTERSIL CORP
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Case Connection
COLLECTOR
COLLECTOR
Collector Current-Max (IC)
2 A
2 A
Collector-Emitter Voltage-Max
300 V
300 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
30
10
JEDEC-95 Code
TO-66
TO-213AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
PNP
PNP
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500
Surface Mount
NO
NO
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
8
5
Rohs Code
HTS Code
8541.29.00.95
Collector-Base Capacitance-Max
220 pF
JESD-609 Code
e0
Operating Temperature-Max
200 °C
Power Dissipation Ambient-Max
35 W
Power Dissipation-Max (Abs)
35 W
Terminal Finish
TIN LEAD
Transistor Application
SWITCHING
Transition Frequency-Nom (fT)
20 MHz
Turn-off Time-Max (toff)
3100 ns
VCEsat-Max
2.5 V
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