JANTXV2N5666
vs
JANTXV2N5666S
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
NEW ENGLAND SEMICONDUCTOR
VPT COMPONENTS
Package Description
TO-5, 3 PIN
TO-5, 3 PIN
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
5 A
5 A
Collector-Emitter Voltage-Max
200 V
200 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
15
15
JEDEC-95 Code
TO-5
TO-39
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
200 °C
200 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
15 W
15 W
Qualification Status
Not Qualified
Qualified
Reference Standard
MIL-19500/455
MIL-19500
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
20 MHz
Base Number Matches
13
8
HTS Code
8541.29.00.95
Date Of Intro
2020-02-13
Case Connection
COLLECTOR
Collector-Base Capacitance-Max
120 pF
Operating Temperature-Min
-65 °C
Power Dissipation Ambient-Max
1.2 W
Turn-off Time-Max (toff)
1500 ns
Turn-on Time-Max (ton)
250 ns
VCEsat-Max
1 V