JANTXV2N5666 vs JANTXV2N5666S feature comparison

JANTXV2N5666 New England Semiconductor

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JANTXV2N5666S VPT Components

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Rohs Code No No
Part Life Cycle Code Transferred Active
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR VPT COMPONENTS
Package Description TO-5, 3 PIN TO-5, 3 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 5 A 5 A
Collector-Emitter Voltage-Max 200 V 200 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 15 15
JEDEC-95 Code TO-5 TO-39
JESD-30 Code O-MBCY-W3 O-MBCY-W3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 200 °C 200 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 15 W 15 W
Qualification Status Not Qualified Qualified
Reference Standard MIL-19500/455 MIL-19500
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 20 MHz
Base Number Matches 13 8
HTS Code 8541.29.00.95
Date Of Intro 2020-02-13
Case Connection COLLECTOR
Collector-Base Capacitance-Max 120 pF
Operating Temperature-Min -65 °C
Power Dissipation Ambient-Max 1.2 W
Turn-off Time-Max (toff) 1500 ns
Turn-on Time-Max (ton) 250 ns
VCEsat-Max 1 V