JANTXV2N5116
vs
2N5116-PBF
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VPT COMPONENTS
DIGITRON SEMICONDUCTORS
Package Description
SIMILAR TO TO-18, 3 PIN
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.95
Additional Feature
HIGH RELIABILITY
Case Connection
GATE
Configuration
SINGLE
SINGLE
DS Breakdown Voltage-Min
30 V
30 V
Drain-source On Resistance-Max
175 Ω
150 Ω
FET Technology
JUNCTION
JUNCTION
Feedback Cap-Max (Crss)
7 pF
7 pF
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
DEPLETION MODE
DEPLETION MODE
Operating Temperature-Max
200 °C
200 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation Ambient-Max
0.5 W
Power Dissipation-Max (Abs)
0.5 W
0.5 W
Qualification Status
Qualified
Reference Standard
MIL-19500
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Rohs Code
Drain Current-Max (ID)
0.025 A
JEDEC-95 Code
TO-18
Compare JANTXV2N5116 with alternatives
Compare 2N5116-PBF with alternatives