JANTXV2N3997
vs
2N3997E3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
API TECHNOLOGIES CORP
MICROSEMI CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Case Connection
ISOLATED
ISOLATED
Collector Current-Max (IC)
5 A
5 A
Collector-Emitter Voltage-Max
80 V
80 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
80
20
JEDEC-95 Code
TO-111
TO-111
JESD-30 Code
O-MUPM-D4
O-MUPM-X4
Number of Elements
1
1
Number of Terminals
4
4
Operating Temperature-Max
175 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
POST/STUD MOUNT
POST/STUD MOUNT
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
2 W
Qualification Status
Not Qualified
Reference Standard
MIL
Surface Mount
NO
NO
Terminal Form
SOLDER LUG
UNSPECIFIED
Terminal Position
UPPER
UPPER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
60 MHz
VCEsat-Max
0.25 V
Base Number Matches
1
1
Package Description
TO-111, 4 PIN
Transistor Application
SWITCHING
Compare JANTXV2N3997 with alternatives
Compare 2N3997E3 with alternatives