JANTXV2N3501
vs
JANTXV2N3501L
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
RAYTHEON SEMICONDUCTOR
|
NEW ENGLAND SEMICONDUCTOR
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| JEDEC-95 Code |
TO-39
|
TO-5
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL
|
MIL-19500/366
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
13
|
11
|
| Rohs Code |
|
No
|
| Package Description |
|
TO-5, 3 PIN
|
| Collector Current-Max (IC) |
|
0.3 A
|
| Collector-Emitter Voltage-Max |
|
150 V
|
| DC Current Gain-Min (hFE) |
|
20
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
200 °C
|
| Power Dissipation-Max (Abs) |
|
1 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Turn-off Time-Max (toff) |
|
1150 ns
|
| Turn-on Time-Max (ton) |
|
115 ns
|
|
|
|
Compare JANTXV2N3501 with alternatives