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JANTXV2N3019 vs JANTXV2N3019 feature comparison

JANTXV2N3019 Raytheon Semiconductor

Buy Now Datasheet

JANTXV2N3019 Texas Instruments

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RAYTHEON SEMICONDUCTOR NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
JEDEC-95 Code TO-39 TO-39
JESD-30 Code O-MBCY-W3 O-MBCY-W3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Reference Standard MIL MIL
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Package Description CYLINDRICAL, O-MBCY-W3
HTS Code 8541.29.00.75
Collector-Base Capacitance-Max 12 pF
Collector-Emitter Voltage-Max 80 V
DC Current Gain-Min (hFE) 15
Power Dissipation Ambient-Max 7 W
Transition Frequency-Nom (fT) 100 MHz
VCEsat-Max 1.5 V
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

Compare JANTXV2N3019 with alternatives

Compare JANTXV2N3019 with alternatives