JANTXV2N2323S
vs
JAN2N2323AS
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SILICON TRANSISTOR CORP
MICROSEMI CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.30.00.80
8541.30.00.80
Configuration
SINGLE
SINGLE
DC Gate Trigger Current-Max
0.2 mA
75 mA
DC Gate Trigger Voltage-Max
1 V
0.6 V
Holding Current-Max
2 mA
2 mA
JEDEC-95 Code
TO-39
TO-39
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
e0
Non-Repetitive Pk On-state Cur
15 A
Number of Elements
1
1
Number of Terminals
3
3
On-state Current-Max
220 A
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Qualification Status
Not Qualified
Not Qualified
RMS On-state Current-Max
2.512 A
Reference Standard
MIL
MIL-19500/276F
Repetitive Peak Off-state Voltage
50 V
50 V
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Trigger Device Type
SCR
SCR
Base Number Matches
1
1
Pbfree Code
Package Description
TO-5, 3 PIN
Samacsys Manufacturer
Microsemi Corporation
Additional Feature
HIGH RELIABILITY
Circuit Commutated Turn-off Time-Nom
20 µs
Critical Rate of Rise of Off-State Voltage-Min
0.7 V/us
Repetitive Peak Off-state Leakage Current-Max
10 µA
Repetitive Peak Reverse Voltage
50 V
Compare JANTXV2N2323S with alternatives
Compare JAN2N2323AS with alternatives