JANTXV2N2218
vs
2N2218PBFREE
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SILICON TRANSISTOR CORP
CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.8 A
0.8 A
Collector-Emitter Voltage-Max
30 V
30 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
40
20
JEDEC-95 Code
TO-39
TO-39
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
200 °C
200 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
0.8 W
3 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN OVER NICKEL
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
250 MHz
Base Number Matches
9
1
Package Description
CYLINDRICAL, O-MBCY-W3
HTS Code
8541.21.00.75
Date Of Intro
2018-01-30
Collector-Base Capacitance-Max
8 pF
Operating Temperature-Min
-65 °C
Power Dissipation Ambient-Max
0.8 W
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
285 ns
Turn-on Time-Max (ton)
35 ns
VCEsat-Max
1.6 V
Compare JANTXV2N2218 with alternatives
Compare 2N2218PBFREE with alternatives