JANTXV1N978BUR-1 vs BZT55C51L0 feature comparison

JANTXV1N978BUR-1 Compensated Devices Inc

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BZT55C51L0 Taiwan Semiconductor

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Part Life Cycle Code Transferred Active
Ihs Manufacturer COMPENSATED DEVICES INC TAIWAN SEMICONDUCTOR CO LTD
Package Description HERMETIC SEALED, GLASS, LL34, MELF-2 ROHS COMPLIANT, HERMETIC SEALED, GLASS, LS34, QUADRO MINIMELF-2
Reach Compliance Code unknown compliant
Additional Feature METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-213AA DO-213AA
JESD-30 Code O-LELF-R2 O-LELF-R2
Knee Impedance-Max 1500 Ω 700 Ω
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/117
Reference Voltage-Nom 51 V 51 V
Reverse Current-Max 0.5 µA 0.1 µA
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Voltage Tol-Max 5% 5%
Working Test Current 2.5 mA 2.5 mA
Base Number Matches 9 1
Rohs Code Yes
ECCN Code EAR99
HTS Code 8541.10.00.50
Dynamic Impedance-Max 125 Ω
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reverse Test Voltage 38 V
Terminal Finish MATTE TIN OVER NICKEL
Time@Peak Reflow Temperature-Max (s) 30

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