JANTXV1N6631US vs 1N6631US feature comparison

JANTXV1N6631US Microchip Technology Inc

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1N6631US Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY METALLURGICALLY BONDED
Application ULTRA FAST RECOVERY HIGH VOLTAGE ULTRA FAST RECOVERY
Breakdown Voltage-Min 1100 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.95 V 1.6 V
JESD-30 Code O-LELF-R2 O-LELF-R2
JESD-609 Code e0 e0
Non-rep Pk Forward Current-Max 60 A 60 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C
Output Current-Max 1.4 A 2.5 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-STD-750; MIL-PRF-19500
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 4 µA
Reverse Recovery Time-Max 0.06 µs 0.06 µs
Reverse Test Voltage 1000 V
Surface Mount YES YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 4 3
Pbfree Code No
Package Description GLASS, D-5B PACKAGE, 2 PIN
Pin Count 2
Manufacturer Package Code D-5B PACKAGE
ECCN Code EAR99
HTS Code 8541.10.00.80
Technology AVALANCHE

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