JANTXV1N6626
vs
JANTXV1N6626
feature comparison
Pbfree Code |
No
|
No
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
SENSITRON SEMICONDUCTOR
|
MICROSEMI CORP
|
Package Description |
HERMETIC, 306, 2 PIN
|
HERMETIC SEALED, GLASS, E, 2 PIN
|
Pin Count |
2
|
2
|
Manufacturer Package Code |
306
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Application |
ULTRA FAST RECOVERY
|
ULTRA FAST RECOVERY
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1.4 V
|
|
JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
JESD-609 Code |
e0
|
e0
|
Non-rep Pk Forward Current-Max |
75 A
|
75 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
|
Output Current-Max |
2 A
|
1.75 A
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL
|
MIL-19500/590
|
Rep Pk Reverse Voltage-Max |
200 V
|
|
Reverse Recovery Time-Max |
0.03 µs
|
0.045 µs
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
3
|
3
|
Additional Feature |
|
METALLURGICALLY BONDED, HIGH RELIABILITY
|
|
|
|
Compare JANTXV1N6626 with alternatives
Compare JANTXV1N6626 with alternatives