JANTXV1N6462US vs JAN1N6462US feature comparison

JANTXV1N6462US Microsemi Corporation

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JAN1N6462US Bkc Semiconductors Inc

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP BKC SEMICONDUCTORS INC
Package Description SURFACE MOUNT PACKAGE-2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XELF-R2 O-MELF-R2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/551C MIL-19500/551
Rep Pk Reverse Voltage-Max 6 V 6 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 6 6
Additional Feature METALLURGICALLY BODED
Breakdown Voltage-Min 6.5 V
Clamping Voltage-Max 11 V

Compare JANTXV1N6462US with alternatives

Compare JAN1N6462US with alternatives