JANTXV1N6169US vs 1N6169US feature comparison

JANTXV1N6169US Micross Components

Buy Now Datasheet

1N6169US Micross Components

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer MICROSS COMPONENTS MICROSS COMPONENTS
Reach Compliance Code compliant compliant
Additional Feature TRAY TRAY
Breakdown Voltage-Min 117 V 117 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 187.3 V 187.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 O-LELF-R2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 7.5 W 7.5 W
Reference Standard MIL-19500; MIL-HDBK-5961
Rep Pk Reverse Voltage-Max 98.8 V 98.8 V
Reverse Current-Max 5 µA 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 1 5

Compare JANTXV1N6169US with alternatives

Compare 1N6169US with alternatives