JANTXV1N6169US
vs
1N6169US
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
MICROSS COMPONENTS
|
MICROSS COMPONENTS
|
Reach Compliance Code |
compliant
|
compliant
|
Additional Feature |
TRAY
|
TRAY
|
Breakdown Voltage-Min |
117 V
|
117 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Clamping Voltage-Max |
187.3 V
|
187.3 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
7.5 W
|
7.5 W
|
Reference Standard |
MIL-19500; MIL-HDBK-5961
|
|
Rep Pk Reverse Voltage-Max |
98.8 V
|
98.8 V
|
Reverse Current-Max |
5 µA
|
5 µA
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Base Number Matches |
1
|
5
|
|
|
|
Compare JANTXV1N6169US with alternatives
Compare 1N6169US with alternatives