JANTXV1N6169 vs 1N6169 feature comparison

JANTXV1N6169 Semicon Components Inc

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1N6169 Semicon Components Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMICON COMPONENTS INC SEMICON COMPONENTS INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW IMPEDANCE
Breakdown Voltage-Min 117.325 V
Breakdown Voltage-Nom 130 V 130 V
Case Connection ISOLATED
Clamping Voltage-Max 187 V 187 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 7.5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 98.8 V 98.8 V
Surface Mount NO NO
Technology AVALANCHE
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 2 8

Compare JANTXV1N6169 with alternatives

Compare 1N6169 with alternatives