JANTXV1N6169
vs
1N6169
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SEMICON COMPONENTS INC
SEMICON COMPONENTS INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW IMPEDANCE
Breakdown Voltage-Min
117.325 V
Breakdown Voltage-Nom
130 V
130 V
Case Connection
ISOLATED
Clamping Voltage-Max
187 V
187 V
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
1500 W
Number of Elements
1
Number of Terminals
2
Package Body Material
GLASS
Package Shape
ROUND
Package Style
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
7.5 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
98.8 V
98.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
Terminal Position
AXIAL
Base Number Matches
2
8
Compare JANTXV1N6169 with alternatives
Compare 1N6169 with alternatives