JANTXV1N6169
vs
P6SMB8.2AHE3/52
feature comparison
| Pbfree Code |
No
|
Yes
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
VISHAY SEMICONDUCTORS
|
| Package Description |
HERMETIC SEALED, GLASS, C PACKAGE-2
|
R-PDSO-C2
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
HIGH RELIABILITY
|
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LALF-W2
|
R-PDSO-C2
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
600 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Polarity |
BIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
3 W
|
5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500
|
|
| Rep Pk Reverse Voltage-Max |
98.8 V
|
7.02 V
|
| Surface Mount |
NO
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN
|
| Terminal Form |
WIRE
|
C BEND
|
| Terminal Position |
AXIAL
|
DUAL
|
| Base Number Matches |
4
|
2
|
| Part Package Code |
|
DO-214AA
|
| Breakdown Voltage-Max |
|
8.61 V
|
| Breakdown Voltage-Min |
|
7.79 V
|
| Breakdown Voltage-Nom |
|
8.2 V
|
| Clamping Voltage-Max |
|
12.1 V
|
| JEDEC-95 Code |
|
DO-214AA
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare JANTXV1N6169 with alternatives
Compare P6SMB8.2AHE3/52 with alternatives