JANTXV1N6167
vs
1N6167
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMICON COMPONENTS INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
LOW IMPEDANCE
HIGH RELIABILITY
Breakdown Voltage-Min
99.275 V
Breakdown Voltage-Nom
110 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
159 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
7.5 W
3 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
83.6 V
86.6 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
28
Factory Lead Time
21 Weeks
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Compare JANTXV1N6167 with alternatives
Compare 1N6167 with alternatives