JANTXV1N6137US
vs
JANTXV1N6137US
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROSS COMPONENTS
SENSITRON SEMICONDUCTOR
Package Description
HERMETIC SEALED, SURFACE MOUNT PACKAGE-2
Reach Compliance Code
unknown
compliant
Category CO2 Kg
8.54
8.54
Conflict Mineral Status
DRC Conflict Free
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.10
CMRT V6.22
Qualifications
DLA
Breakdown Voltage-Min
180 V
Breakdown Voltage-Nom
200 V
200 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
273 V
273 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XELF-N2
O-LELF-R2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.5 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
152 V
152 V
Surface Mount
YES
YES
Technology
ZENER
AVALANCHE
Terminal Form
NO LEAD
WRAP AROUND
Terminal Position
END
END
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
1
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Candidate List Date
2018-01-15
Compare JANTXV1N6137US with alternatives
Compare JANTXV1N6137US with alternatives