JANTXV1N6130US
vs
1N6130US
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
Package Description |
MELF-2
|
HERMETIC SEALED, GLASS, D-5B, E-MELF-2
|
Reach Compliance Code |
compliant
|
compliant
|
Factory Lead Time |
25 Weeks
|
21 Weeks
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Breakdown Voltage-Min |
90.25 V
|
90.25 V
|
Clamping Voltage-Max |
144.5 V
|
137.6 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
JESD-609 Code |
e0
|
e0
|
Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
2 W
|
2 W
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500
|
|
Rep Pk Reverse Voltage-Max |
76 V
|
76 V
|
Reverse Current-Max |
1 µA
|
|
Reverse Test Voltage |
76 V
|
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Base Number Matches |
1
|
5
|
Breakdown Voltage-Nom |
|
100 V
|
Case Connection |
|
ISOLATED
|
|
|
|
Compare JANTXV1N6130US with alternatives
Compare 1N6130US with alternatives