JANTXV1N6122US vs JANS1N6122US feature comparison

JANTXV1N6122US Microchip Technology Inc

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JANS1N6122US Micross Components

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Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSS COMPONENTS
Package Description MELF-2 HERMETIC SEALED, SURFACE MOUNT PACKAGE-2
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 44.7 V 42.3 V
Clamping Voltage-Max 67.8 V 67.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 O-XELF-N2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2 W 1.5 W
Qualification Status Qualified Qualified
Reference Standard MIL-19500 MIL-19500/516
Rep Pk Reverse Voltage-Max 35.8 V 35.8 V
Reverse Current-Max 1 µA
Reverse Test Voltage 35.8 V
Surface Mount YES YES
Technology AVALANCHE ZENER
Terminal Finish TIN LEAD
Terminal Form WRAP AROUND NO LEAD
Terminal Position END END
Base Number Matches 1 1
Breakdown Voltage-Nom 47 V
Case Connection ISOLATED
Moisture Sensitivity Level 1

Compare JANTXV1N6122US with alternatives

Compare JANS1N6122US with alternatives