JANTXV1N6122US
vs
JAN1N6122US
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSS COMPONENTS
Package Description
MELF-2
HERMETIC SEALED, SURFACE MOUNT PACKAGE-2
Reach Compliance Code
compliant
unknown
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
44.7 V
42.3 V
Clamping Voltage-Max
67.8 V
67.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LELF-R2
O-XELF-N2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
GLASS
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2 W
1.5 W
Qualification Status
Qualified
Qualified
Reference Standard
MIL-19500
MIL-19500/516
Rep Pk Reverse Voltage-Max
35.8 V
35.8 V
Reverse Current-Max
1 µA
Reverse Test Voltage
35.8 V
Surface Mount
YES
YES
Technology
AVALANCHE
ZENER
Terminal Finish
TIN LEAD
Terminal Form
WRAP AROUND
NO LEAD
Terminal Position
END
END
Base Number Matches
1
1
Factory Lead Time
29 Weeks
Breakdown Voltage-Nom
47 V
Case Connection
ISOLATED
Compare JANTXV1N6122US with alternatives
Compare JAN1N6122US with alternatives