JANTXV1N6120US
vs
1N6120USE3
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
| Package Description |
MELF-2
|
|
| Pin Count |
2
|
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Min |
37.1 V
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LELF-R2
|
|
| JESD-609 Code |
e0
|
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
GLASS
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
5 W
|
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MIL-19500
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WRAP AROUND
|
|
| Terminal Position |
END
|
|
| Base Number Matches |
1
|
1
|
| Breakdown Voltage-Nom |
|
35.25 V
|
| Clamping Voltage-Max |
|
56.2 V
|
| Rep Pk Reverse Voltage-Max |
|
29.7 V
|
|
|
|
Compare JANTXV1N6120US with alternatives
Compare 1N6120USE3 with alternatives