JANTXV1N6120A
vs
P4KE400C
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROSS COMPONENTS
INTERNATIONAL SEMICONDUCTOR INC
Package Description
HERMETIC SEALED PACKAGE-2
Reach Compliance Code
unknown
unknown
Additional Feature
HIGH RELIABILITY
LOW IMPEDANCE
Breakdown Voltage-Min
35.1 V
360 V
Breakdown Voltage-Nom
39 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
53.6 V
574 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-MALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.5 W
1 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
29.7 V
Surface Mount
NO
NO
Technology
ZENER
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
440 V
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
5 µA
Compare JANTXV1N6120A with alternatives
Compare P4KE400C with alternatives