JANTXV1N6116 vs JAN1N6116 feature comparison

JANTXV1N6116 Microsemi Corporation

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JAN1N6116 Semicon Components Inc

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP SEMICON COMPONENTS INC
Pin Count 2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 24.3 V 24.415 V
Breakdown Voltage-Nom 27 V 27 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 39.1 V 39.27 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-XALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2 W 3 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516 MIL-19500/516
Rep Pk Reverse Voltage-Max 20.6 V 21 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 1 µA

Compare JANTXV1N6116 with alternatives

Compare JAN1N6116 with alternatives