We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

JANTXV1N6113A vs 1N6113AE3 feature comparison

JANTXV1N6113A Microsemi Corporation

Buy Now Datasheet

1N6113AE3 Microsemi Corporation

Buy Now Datasheet
Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description HERMETIC SEALED, GLASS PACKAGE-2 ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 18 V 19 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 2 W
Qualification Status Not Qualified
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 15.2 V 15.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Diodes » Transient Suppressors
Diodes » Transient Suppressors

Compare JANTXV1N6113A with alternatives

Compare 1N6113AE3 with alternatives