JANTXV1N6112A
vs
JAN1N6112A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROSS COMPONENTS
BKC SEMICONDUCTORS INC
Package Description
HERMETIC SEALED PACKAGE-2
Reach Compliance Code
unknown
unknown
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
16.2 V
16.2 V
Breakdown Voltage-Nom
18 V
18 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
25.1 V
26.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-MALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.5 W
3 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/516
MIL-19500/516
Rep Pk Reverse Voltage-Max
13.7 V
13.7 V
Surface Mount
NO
NO
Technology
ZENER
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
Rohs Code
JESD-609 Code
e0
Reverse Current-Max
1 µA
Terminal Finish
TIN LEAD
Compare JANTXV1N6112A with alternatives
Compare JAN1N6112A with alternatives