JANTXV1N6111A
vs
P4KE160C-GT3
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
O-PALF-W2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Samacsys Manufacturer |
Microsemi Corporation
|
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Breakdown Voltage-Min |
14.4 V
|
144 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LALF-W2
|
O-PALF-W2
|
| JESD-609 Code |
e0
|
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
400 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
3 W
|
1 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500/516
|
UL RECOGNIZED
|
| Rep Pk Reverse Voltage-Max |
12.2 V
|
130 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
1
|
| Breakdown Voltage-Max |
|
176 V
|
| JEDEC-95 Code |
|
DO-41
|
| Moisture Sensitivity Level |
|
1
|
|
|
|
Compare JANTXV1N6111A with alternatives
Compare P4KE160C-GT3 with alternatives