JANTXV1N6109
vs
JANS1N6109
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROSS COMPONENTS
MICROCHIP TECHNOLOGY INC
Package Description
HERMETIC SEALED PACKAGE-2
Reach Compliance Code
unknown
compliant
Additional Feature
LOW IMPEDANCE
HIGH RELIABILITY
Breakdown Voltage-Min
11.7 V
12.3 V
Breakdown Voltage-Nom
13 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
19.11 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-MALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
METAL
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.5 W
2 W
Qualification Status
Qualified
Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
9.9 V
9.9 V
Reverse Current-Max
20 µA
Surface Mount
NO
NO
Technology
ZENER
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
5
Rohs Code
Factory Lead Time
32 Weeks
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