JANTXV1N6105
vs
1N6105
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SEMTECH CORP
MICROCHIP TECHNOLOGY INC
Package Description
HERMETIC SEALED PACKAGE-2
HERMETIC SEALED, GLASS, E PACKAGE-2
Pin Count
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
LOW IMPEDANCE
HIGH RELIABILITY
Breakdown Voltage-Min
8.19 V
8.65 V
Breakdown Voltage-Nom
9.1 V
9.1 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
14.07 V
13.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-MALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
METAL
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.5 W
2 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
6.9 V
6.9 V
Reverse Current-Max
20 µA
Surface Mount
NO
NO
Technology
ZENER
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
4
21
Rohs Code
No
Factory Lead Time
21 Weeks
Category CO2 Kg
8.54
Candidate List Date
2020-06-25
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V5.10
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare JANTXV1N6105 with alternatives
Compare 1N6105 with alternatives