JANTXV1N6105
vs
1N6150A
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROSS COMPONENTS
|
SENSITRON SEMICONDUCTOR
|
| Package Description |
HERMETIC SEALED PACKAGE-2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| Additional Feature |
LOW IMPEDANCE
|
|
| Breakdown Voltage-Min |
8.19 V
|
20.9 V
|
| Breakdown Voltage-Nom |
9.1 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
14.07 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-MALF-W2
|
O-PALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
1.5 W
|
3 W
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500/516
|
|
| Rep Pk Reverse Voltage-Max |
6.9 V
|
|
| Reverse Current-Max |
20 µA
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
4
|
8
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
|
|
|
Compare JANTXV1N6105 with alternatives
Compare 1N6150A with alternatives