JANTXV1N6104 vs 1N6104 feature comparison

JANTXV1N6104 Semicoa Semiconductors

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1N6104 STMicroelectronics

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Pbfree Code No
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer SEMICOA CORP STMICROELECTRONICS
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 7.4005 V 7.38 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 E-LALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ELLIPTICAL
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 3 W
Qualification Status Not Qualified
Reference Standard MIL-19500/516
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 9 11
Rohs Code No
Package Description GLASS, CB-431, 2 PIN
Breakdown Voltage-Max 9.02 V
Breakdown Voltage-Nom 8.2 V
Clamping Voltage-Max 12.5 V
Operating Temperature-Max 175 °C
Rep Pk Reverse Voltage-Max 6.2 V

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