JANTXV1N6060A vs JANTXV1N6060A feature comparison

JANTXV1N6060A Semicon Components Inc

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JANTXV1N6060A Silicon Transistor Corporation

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SEMICON COMPONENTS INC SILICON TRANSISTOR CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 78.8 V 78.8 V
Breakdown Voltage-Min 71.3 V 71.3 V
Breakdown Voltage-Nom 75 V
Case Connection CATHODE
Clamping Voltage-Max 103 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-MALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/507 MIL-19500/500
Rep Pk Reverse Voltage-Max 64 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
JEDEC-95 Code DO-13

Compare JANTXV1N6060A with alternatives

Compare JANTXV1N6060A with alternatives