JANTXV1N6047A
vs
1N6047A/TR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SILICON TRANSISTOR CORP
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
23.1 V
23.1 V
Breakdown Voltage-Min
20.9 V
20.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-202AA
JESD-30 Code
O-MALF-W2
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/500
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
7
1
Rohs Code
Package Description
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Factory Lead Time
21 Weeks
Case Connection
ISOLATED
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Rep Pk Reverse Voltage-Max
18 V
Terminal Finish
TIN LEAD
Compare JANTXV1N6047A with alternatives
Compare 1N6047A/TR with alternatives