JANTXV1N5665A
vs
JANTXV1N5665ATR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SILICON TRANSISTOR CORP
MICROSEMI CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
210 V
210 V
Breakdown Voltage-Min
190 V
190 V
Case Connection
ISOLATED
CATHODE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-202AA
JESD-30 Code
O-MALF-W2
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/500
MIL-19500
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
7
1
Pbfree Code
Rohs Code
Part Package Code
DO-13
Package Description
O-MALF-W2
Pin Count
2
Breakdown Voltage-Nom
200 V
Clamping Voltage-Max
274 V
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Rep Pk Reverse Voltage-Max
171 V
Terminal Finish
TIN LEAD
Compare JANTXV1N5665A with alternatives
Compare JANTXV1N5665ATR with alternatives