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JANTXV1N5665A vs 1N5665A feature comparison

JANTXV1N5665A Semicon Components Inc

Buy Now Datasheet

1N5665A Semitronics Corp

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMICON COMPONENTS INC SEMITRONICS CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 210 V 210 V
Breakdown Voltage-Min 190 V 190 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 274 V 274 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-XALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/500
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Breakdown Voltage-Nom 200 V
JEDEC-95 Code DO-13
Rep Pk Reverse Voltage-Max 171 V
Diodes » Transient Suppressors
Diodes » Transient Suppressors

Compare JANTXV1N5665A with alternatives

Compare 1N5665A with alternatives