JANTXV1N5639A
vs
JANTX1N5639A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SILICON TRANSISTOR CORP
DEFENSE LOGISTICS AGENCY
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
18.9 V
18.9 V
Breakdown Voltage-Min
17.1 V
17.1 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-13
JESD-30 Code
O-MALF-W2
O-XALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Qualified
Reference Standard
MIL-19500/500
MIL-19500/500D
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
7
7
Package Description
DO-13, 2 PIN
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Rep Pk Reverse Voltage-Max
15.3 V
Compare JANTXV1N5639A with alternatives
Compare JANTX1N5639A with alternatives