JANTXV1N5621US vs EGL41G-E3/97 feature comparison

JANTXV1N5621US Defense Logistics Agency

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EGL41G-E3/97 Vishay Semiconductors

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Part Life Cycle Code Active Active
Ihs Manufacturer DEFENSE LOGISTICS AGENCY VISHAY SEMICONDUCTORS
Package Description HERMETIC SEALED, GLASS PACKAGE-2 O-PELF-R2
Reach Compliance Code unknown unknown
Application GENERAL PURPOSE EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code O-LELF-R2 O-LELF-R2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 1 A 1 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/429J
Reverse Recovery Time-Max 0.3 µs 0.05 µs
Surface Mount YES YES
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 4 2
Pbfree Code Yes
Part Package Code DO-213AB
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Vishay
Additional Feature FREE WHEELING DIODE; HIGH RELIABILITY
Forward Voltage-Max (VF) 1.25 V
JEDEC-95 Code DO-213AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 400 V
Reverse Current-Max 5 µA
Reverse Test Voltage 400 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 40

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