JANTXV1N5551
vs
1N5551
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROSS COMPONENTS
INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1.2 V
JESD-30 Code
E-XALF-W2
O-LALF-W2
Non-rep Pk Forward Current-Max
150 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Output Current-Max
3 A
3 A
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ELLIPTICAL
ROUND
Package Style
LONG FORM
LONG FORM
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
400 V
400 V
Reverse Current-Max
1 µA
Reverse Recovery Time-Max
2 µs
2 µs
Reverse Test Voltage
400 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
8
15
ECCN Code
EAR99
HTS Code
8541.10.00.80
Operating Temperature-Max
175 °C
Compare JANTXV1N5551 with alternatives
Compare 1N5551 with alternatives