JANTXV1N5529B vs 1N5529BE3 feature comparison

JANTXV1N5529B Motorola Mobility LLC

Buy Now Datasheet

1N5529BE3 Microsemi Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MOTOROLA INC MICROSEMI CORP
Package Description O-LALF-W2 O-XALF-W2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW NOISE, HIGH RELIABILITY METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-7 DO-35
JESD-30 Code O-LALF-W2 O-XALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.5 W
Qualification Status Not Qualified
Reference Voltage-Nom 9.1 V 9.1 V
Reverse Current-Max 0.1 µA
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 1 mA 1 mA
Base Number Matches 5 1
Rohs Code Yes
Part Package Code DO-35
Pin Count 2
Dynamic Impedance-Max 45 Ω
JESD-609 Code e3
Reference Standard MIL-19500/437E
Terminal Finish MATTE TIN

Compare JANTXV1N5529B with alternatives

Compare 1N5529BE3 with alternatives