JANTXV1N5519BUR-1 vs BZD27C3V6 feature comparison

JANTXV1N5519BUR-1 VPT Components

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BZD27C3V6 NXP Semiconductors

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Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VPT COMPONENTS NXP SEMICONDUCTORS
Package Description SOD-80, MELF-2 O-LELF-N2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 24 Ω
JEDEC-95 Code DO-213AA
JESD-30 Code O-LELF-R2 O-LELF-N2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.8 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500
Reference Voltage-Nom 3.6 V 3.6 V
Reverse Current-Max 3 µA
Reverse Test Voltage 1 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form WRAP AROUND NO LEAD
Terminal Position END END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Voltage Tol-Max 5% 5%
Working Test Current 20 mA 100 mA
Base Number Matches 8 2

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