JANTXV1N5461B
vs
1N5461B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
AEROFLEX/MICROMETRICS
MSI ELECTRONICS INC
Part Package Code
DO-7
Package Description
O-LALF-W2
O-LALF-W2
Pin Count
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
30 V
30 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Cap Tolerance
5%
5%
Diode Capacitance Ratio-Min
2.7
2.7
Diode Capacitance-Nom
6.8 pF
6.8 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
JEDEC-95 Code
DO-7
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.4 W
0.4 W
Qualification Status
Not Qualified
Not Qualified
Quality Factor-Min
600
600
Reference Standard
MIL
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Variable Capacitance Diode Classification
ABRUPT
ABRUPT
Base Number Matches
1
2
Additional Feature
HIGH Q
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Operating Temperature-Max
175 °C
Rep Pk Reverse Voltage-Max
30 V
Reverse Current-Max
2e-8 µA
Reverse Test Voltage
25 V
Compare JANTXV1N5461B with alternatives
Compare 1N5461B with alternatives