JANTXV1N5312-1 vs JAN1N5312 feature comparison

JANTXV1N5312-1 Microsemi Corporation

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JAN1N5312 Cobham PLC

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP KNOX SEMICONDUCTORS INC
Part Package Code DO-7 DO-7
Package Description DO-35, 2 PIN O-LALF-W2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Samacsys Manufacturer Microsemi Corporation
Additional Feature METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type CURRENT REGULATOR DIODE CURRENT REGULATOR DIODE
JEDEC-95 Code DO-35 DO-7
JESD-30 Code O-XALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Limiting Voltage-Max 2.6 V 2.6 V
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/463 MIL-19500/463
Regulation Current-Nom (Ireg) 3.9 mA 3.9 mA
Surface Mount NO NO
Technology FIELD EFFECT FIELD EFFECT
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
Dynamic Impedance-Min 255000 Ω
Knee Impedance-Max 17000 Ω
Operating Temperature-Max 200 °C
Operating Temperature-Min -55 °C
Rep Pk Reverse Voltage-Max 100 V

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