JANTXV1N5291UR
vs
1N5291UR-1E3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
| Part Package Code |
DO-213AB
|
DO-213AB
|
| Package Description |
O-XELF-R2
|
ROHS COMPLIANT, HERMETIC SEALED, GLASS, LL41, MELF-2
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
CURRENT REGULATOR DIODE
|
CURRENT REGULATOR DIODE
|
| Dynamic Impedance-Min |
1900000 Ω
|
|
| JEDEC-95 Code |
DO-213AB
|
DO-213AB
|
| JESD-30 Code |
O-XELF-R2
|
O-LELF-R2
|
| JESD-609 Code |
e0
|
e3
|
| Limiting Voltage-Max |
1.1 V
|
1.1 V
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
UNSPECIFIED
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
|
| Regulation Current-Nom (Ireg) |
0.56 mA
|
0.56 mA
|
| Rep Pk Reverse Voltage-Max |
100 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
FIELD EFFECT
|
FIELD EFFECT
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Base Number Matches |
2
|
1
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
|
|
|
Compare JANTXV1N5291UR with alternatives
Compare 1N5291UR-1E3 with alternatives