JANTXV1N4485 vs 1N4485E3 feature comparison

JANTXV1N4485 Bkc Semiconductors Inc

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1N4485E3 Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer BKC SEMICONDUCTORS INC MICROSEMI CORP
Reach Compliance Code unknown compliant
Additional Feature HIGH SURGE CAPABILITY METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 100 Ω 100 Ω
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.5 W 1.5 W
Qualification Status Not Qualified
Reference Standard MIL-19500/406
Reference Voltage-Nom 68 V 3.3 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 3.7 mA 76 mA
Base Number Matches 9 1
Package Description O-LALF-W2
ECCN Code EAR99
HTS Code 8541.10.00.50
JEDEC-95 Code DO-41
Operating Temperature-Min -65 °C

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