JANTXV1N4476
vs
1N4476US
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SEMICON COMPONENTS INC
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
HIGH SURGE CAPABILITY
|
METALLURGICALLY BONDED
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
20 Ω
|
|
| JESD-30 Code |
O-LALF-W2
|
O-LELF-R2
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1.5 W
|
1.5 W
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MIL-19500/406
|
|
| Reference Voltage-Nom |
30 V
|
30 V
|
| Surface Mount |
NO
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
WIRE
|
WRAP AROUND
|
| Terminal Position |
AXIAL
|
END
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
8.5 mA
|
8.5 mA
|
| Base Number Matches |
9
|
6
|
| Factory Lead Time |
|
28 Weeks
|
|
|
|
Compare JANTXV1N4476 with alternatives
Compare 1N4476US with alternatives