JANTX2N7218U
vs
JANTXV2N7224U
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
DEFENSE LOGISTICS AGENCY
Package Description
CHIP CARRIER, R-CBCC-N3
HERMETIC SEALED, SMD1, 3 PIN
Pin Count
3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
250 mJ
150 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
28 A
34 A
Drain-source On Resistance-Max
0.125 Ω
0.081 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-CBCC-N3
R-CBCC-N3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
125 W
Power Dissipation-Max (Abs)
125 W
Pulsed Drain Current-Max (IDM)
112 A
136 A
Qualification Status
Not Qualified
Qualified
Reference Standard
MIL-19500/596
MIL-19500/592
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
169 ns
Turn-on Time-Max (ton)
166 ns
Base Number Matches
2
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
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