JANTX2N7218U
vs
IRFN150
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
CHIP CARRIER, R-CBCC-N3
CHIP CARRIER, R-CBCC-N3
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Infineon
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
250 mJ
150 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
28 A
34 A
Drain-source On Resistance-Max
0.125 Ω
0.081 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-CBCC-N3
R-CBCC-N3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
100 W
Pulsed Drain Current-Max (IDM)
112 A
136 A
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/596
MIL-19500/592
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Compare JANTX2N7218U with alternatives
Compare IRFN150 with alternatives