JANTX2N6845
vs
IRFF9120PBF
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
HERMETIC SEALED, TO-39, 3 PIN
|
CYLINDRICAL, O-MBCY-W3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE RATED
|
|
| Avalanche Energy Rating (Eas) |
115 mJ
|
115 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
4 A
|
4 A
|
| Drain-source On Resistance-Max |
0.69 Ω
|
0.69 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
16 A
|
16 A
|
| Qualification Status |
Qualified
|
|
| Reference Standard |
MIL-19500/563
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
2
|
| Rohs Code |
|
Yes
|
| Operating Temperature-Max |
|
150 °C
|
|
|
|
Compare JANTX2N6845 with alternatives
Compare IRFF9120PBF with alternatives