JANTX2N6788U
vs
IRFE120PBF
feature comparison
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
HERMETIC SEALED, LCC-18
|
CHIP CARRIER, R-CQCC-N18
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE ENERGY RATED
|
AVALANCHE ENERGY RATED
|
Avalanche Energy Rating (Eas) |
76 mJ
|
0.242 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
4.5 A
|
4.5 A
|
Drain-source On Resistance-Max |
0.345 Ω
|
0.35 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
S-CQCC-N18
|
R-CQCC-N18
|
Number of Elements |
1
|
1
|
Number of Terminals |
18
|
18
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
18 A
|
18 A
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/555
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
QUAD
|
QUAD
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
40
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
Part Package Code |
|
TO-39
|
Pin Count |
|
3
|
HTS Code |
|
8541.29.00.95
|
Case Connection |
|
SOURCE
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation Ambient-Max |
|
14 W
|
Turn-off Time-Max (toff) |
|
110 ns
|
Turn-on Time-Max (ton) |
|
110 ns
|
|
|
|
Compare JANTX2N6788U with alternatives
Compare IRFE120PBF with alternatives