JANTX2N6764
vs
IRF153
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
STMICROELECTRONICS
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
FAST SWITCHING
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
60 V
Drain Current-Max (ID)
38 A
33 A
Drain-source On Resistance-Max
0.055 Ω
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
500 pF
JEDEC-95 Code
TO-204AE
TO-3
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
150 W
Pulsed Drain Current-Max (IDM)
70 A
132 A
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MILITARY STANDARD (USA)
Surface Mount
NO
NO
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
225 ns
Turn-on Time-Max (ton)
135 ns
Base Number Matches
1
1
Rohs Code
JESD-609 Code
e0
Power Dissipation-Max (Abs)
150 W
Terminal Finish
TIN LEAD
Compare JANTX2N6764 with alternatives
Compare IRF153 with alternatives